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IXTK 120N25P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 ? (External)
50
70
8000
1300
220
30
33
130
S
pF
pF
pF
ns
ns
ns
t f
33
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
185
50
80
0.15
nC
nC
nC
0.18 ° C/W
° C/W
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
K
L
L1
0.00 0.25
20.32 20.83
2.29 2.59
.000 .010
.800 .820
.090 .102
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
P
Q
Q1
R
R1
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
I S
V GS = 0 V
120
A
S
T
6.04 6.30
1.57 1.83
.238 .248
.062 .072
I SM
V SD
t rr
Q RM
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
200
3.0
300
1.5
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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